Semiconductor devices, methods of manufacturing thereof, and image sensor devices

ABSTRACT

Semiconductor devices, methods of manufacturing thereof, and image sensor devices are disclosed. In some embodiments, a semiconductor device comprises a semiconductor chip comprising an array region, a periphery region, and a through-via disposed therein. The semiconductor device comprises a guard structure disposed in the semiconductor chip between the array region and the through-via or between the through-via and a portion of the periphery region.

BACKGROUND

Semiconductor devices are used in a variety of electronic applications, such as personal computers, cell phones, digital cameras, and other electronic equipment, as examples. Semiconductor devices are typically fabricated by sequentially depositing insulating or dielectric layers, conductive layers, and semiconductive layers of material over a semiconductor substrate, and patterning or processing the substrate and/or the various material layers using lithography to form circuit components and elements thereon. Dozens or hundreds of integrated circuits are typically manufactured on a single semiconductor wafer. The individual dies are singulated by sawing the integrated circuits along a scribe line. The individual dies are then packaged separately, in multi-chip modules, in other types of packaging, or used directly in an end application, for example.

Integrated circuit dies are typically formed on a front side of semiconductor wafers. The integrated circuit dies may comprise various electronic components, such as transistors, diodes, resistors, capacitors, and other devices. The integrated circuit dies may comprise various functions, such as logic memory, processors, and/or other functions.

Complementary metal oxide semiconductor (CMOS) image sensor (CIS) devices are semiconductor devices that are used in some cameras, cell phones, and other devices for capturing images. Back side illumination (BSI) image sensors are CIS devices in which light enters from a back side of a substrate, rather than the front side. BSI sensors are capable of capturing more of an image signal than front side illumination image sensors due to reduced reflection of light, in some applications.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the present disclosure, and the advantages thereof, reference is now made to the following descriptions taken in conjunction with the accompanying drawings, in which:

FIG. 1 is a perspective view illustrating a semiconductor device in accordance with some embodiments of the present disclosure;

FIG. 2 is a cross-sectional view of a portion of the semiconductor device shown in FIG. 1 in accordance with some embodiments;

FIG. 3 is a top view that illustrates a guard structure disposed within a semiconductor device in accordance with some embodiments;

FIG. 4 is a cross-sectional view of a portion of the semiconductor device shown in FIG. 3 in accordance with some embodiments;

FIGS. 5 through 7 are top views of semiconductor devices that illustrate various shapes and configurations of guard structures for semiconductor devices in accordance with some embodiments; and

FIG. 8 is a flow chart showing a method of manufacturing a semiconductor device in accordance with some embodiments.

Corresponding numerals and symbols in the different figures generally refer to corresponding parts unless otherwise indicated. The figures are drawn to clearly illustrate the relevant aspects of the embodiments and are not necessarily drawn to scale.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

The making and using of some of the embodiments of the present disclosure are discussed in detail below. It should be appreciated, however, that the present disclosure provides many applicable inventive concepts that can be embodied in a wide variety of specific contexts. The specific embodiments discussed are merely illustrative of specific ways to make and use the disclosure, and do not limit the scope of the disclosure.

Some embodiments of the present disclosure are related to semiconductor devices, manufacturing processes thereof, and image sensor devices. Novel guard structures and methods of formation thereof for semiconductor devices and image sensor devices will be described herein.

FIG. 1 is a perspective view illustrating a semiconductor device 100 in accordance with some embodiments of the present disclosure. FIG. 2 is a cross-sectional view of a portion of the semiconductor device 100 shown in FIG. 1 in accordance with some embodiments. The semiconductor device 100 includes three semiconductor chips W1, W2 and Wn bonded together. Semiconductor chip W1 comprises a first semiconductor chip that is bonded to a second semiconductor chip W2. A third semiconductor chip Wn is bonded to the second semiconductor chip W2. Only three semiconductor chips W1, W2 and Wn are shown in the drawings of the present disclosure; alternatively, the semiconductor device 100 may comprise a single semiconductor chip W1, two semiconductor chips W1, W2, or Wn, or four or more semiconductor chips, not shown.

The semiconductor chips W1, W2 and Wn may be bonded together using a suitable wafer bonding technique. Some examples of commonly used bonding techniques for wafer bonding include direct bonding, chemically activated bonding, plasma activated bonding, anodic bonding, eutectic bonding, glass frit bonding, adhesive bonding, thermo-compressive bonding, reactive bonding and/or the like. After the semiconductor chips or wafers W1, W2, and Wn are bonded together, the interface between each pair of adjacent semiconductor wafers W1, W2 and Wn may provide an electrically conductive path between the stacked semiconductor wafers W1, W2, and Wn. In accordance with some embodiments, in a direct bonding process, the connection between the adjacent semiconductor wafers W1, W2, and Wn can be implemented using metal-to-metal bonding (e.g., copper-to-copper bonding), dielectric-to-dielectric bonding (e.g., oxide-to-oxide bonding), metal-to-dielectric bonding (e.g., oxide-to-copper bonding), any combinations thereof, and/or the like. In some embodiments, at least two of the adjacent semiconductor wafers W1, W2, and Wn are bonded together using a suitable metal-dielectric bonding technique such as a copper-silicon oxide nitride (Cu—SiON) bonding process, as another example.

One or more through-vias 110, 110 a, 110 b, and 110 c may be formed within the semiconductor device 100 that provide vertical electrical connections for the semiconductor device 100. The semiconductor device 100 includes a plurality of through-vias 110, 110 a, 110 b, and 110 c in accordance with some embodiments. Reference number 110 labels the through-vias generally, and reference numbers 110 a, 110 b, and 110 c label the through-vias according to the depths that they extend within the semiconductor device 100. Through-vias 110 a extend at least partially through the first semiconductor chip W1 and provide vertical electrical connections for the first semiconductor chip W1, e.g., from an upper layer to an underlying lower layer, or between the various material layers of the first semiconductor chip W1. Through-vias 110 b extend through the first semiconductor chip W1 and at least partially through the second semiconductor chip W2, providing vertical electrical connections between the first semiconductor chip W1 and the second semiconductor chip W2. Through-vias 110 c extend through the first semiconductor chip W1 and the second semiconductor chip Wn, and at least partially through the third semiconductor chip Wn, providing vertical electrical connections between the first semiconductor chip W1 and the third semiconductor chip Wn. Only three through-vias 110 a, 110 b, and 110 c are shown extending through the first, second, and/or third semiconductor chips W1, W2 and Wn; however, alternatively, a plurality of the through-vias 110 a, 110 b, and 110 c may extend through the first, second, and/or third semiconductor chips W1, W2 and Wn, as shown at 110 in FIG. 1, for example.

The first semiconductor chip W1 includes an array region 112, a periphery region 116, and at least one through-via 110, 110 a, 110 b, and 110 c disposed therein. The first semiconductor chip W1 includes an intermediate region 114 disposed between the through-vias 110, 110 a, 110 b, and 110 c and the array region 112, in accordance with some embodiments of the present disclosure.

The array region 112 includes a plurality of devices formed therein. In some embodiments, the plurality of devices in the array region 112 comprises a plurality of pixels, shown in FIG. 2, e.g., wherein the semiconductor device 100 comprises an image sensor device. The first semiconductor chip W1 comprises a pixel array wafer in some embodiments, for example. The array region 112 of the first semiconductor chip W1 comprises an array of pixels 122 in accordance with some embodiments, for example. In some embodiments, the first semiconductor chip W1 comprises a complementary metal oxide semiconductor (CMOS) image sensor (CIS) wafer or device, for example. The semiconductor device 100 comprises a stacked CMOS image sensor device in some embodiments, as another example.

FIG. 2 illustrates portions of the various regions of the first semiconductor chip W1 and the second semiconductor chip W2 in more detail. The first semiconductor chip W1 includes a substrate 102 a and an inter-metal dielectric (IMD) 104 a disposed over the substrate 102 a. The substrate 102 a may include a semiconductor substrate comprising silicon or other semiconductor materials and may be covered by an insulating layer, for example. The substrate 102 a may also include other active components or circuits, not shown. The substrate 102 a may comprise silicon oxide over single-crystal silicon, for example. Compound semiconductors, GaAs, InP, Si/Ge, or SiC, as examples, may be used in place of silicon. The substrate 102 a may comprise a silicon-on-insulator (SOI) or a germanium-on-insulator (GOI) substrate, as examples. In embodiments wherein the first semiconductor chip W1 comprises a CIS wafer, the substrate 102 a may include a variety of electrical circuits and/or devices. The electrical circuits formed on the substrate 102 a may be any type of circuitry suitable for a particular application. In accordance with some embodiments, the electrical circuits may include various n-type metal-oxide semiconductor (NMOS) and/or p-type metal-oxide semiconductor (PMOS) devices such as transistors, capacitors, resistors, diodes, photo-diodes, fuses and/or the like. For example, in accordance with some embodiments, the first semiconductor chip W1 includes at least one periphery device 126 (see FIG. 2) in the periphery region 116. Only one periphery device 126 is shown in FIG. 2; alternatively, a plurality of periphery devices 126 may be formed in the periphery region 116 (see FIG. 7). The periphery device 126 comprises a transistor in the embodiment shown; alternatively, the periphery devices 126 may comprise other types of circuit elements.

The IMD 104 a comprises a plurality of insulating material layers that include a plurality of conductive lines 106 a and conductive vias 108 a formed therein. The IMD 104 a, conductive lines 106 a, and conductive vias 108 a provide electrical connections for the first semiconductor chip W1 in a horizontal and vertical direction. The insulating material layers of the IMD 104 a may comprise silicon dioxide, silicon nitride, low dielectric constant (k) insulating materials having a dielectric constant or k value less than silicon dioxide (e.g., a k value of about 3.9 or less), extra-low k (ELK) dielectric materials having a k value of about 3.0 or less, or other types of materials, as examples. The conductive lines 106 a and vias 108 b may comprise materials such as Cu, Al, alloys thereof, seed layers, and/or barrier layers formed using damascene and/or subtractive etch processes, as examples. Alternatively, the IMD 104 a, conductive lines 106 a, and conductive vias 108 b may comprise other materials and may be formed using other methods.

In some embodiments, the periphery region 116 is disposed around the array region 112, as shown in FIG. 1. For example, the array region 112 of the first semiconductor chip W1 may be located in a substantially central region of the first semiconductor chip W1, and the periphery region 116 may be disposed around a perimeter of the first semiconductor chip W1, around the array region 112. The through-vias 110, 110 a, 110 b, and 110 c are disposed between the array region 112 and the periphery region 116. Alternatively, the arrangement of the array region 112, periphery region 116, and through vias 110, 110 a, 110 b, and 110 c may comprise other shapes and configurations. As another example, the array region 112 may be located in one corner of the first semiconductor chip W1, and the periphery region 116 may be located in an L-shaped region proximate the array region 112.

In embodiments wherein the array region 112 includes an array of pixels, the pixel array 122 is formed within the substrate 102 a, as shown in FIG. 2. In some embodiments, a color filter material 124 is formed over the array of pixels 122, and a lens material 125 is formed over the color filter material 124. The pixels in the pixel array 122 are adapted to sense images received by the pixel array 122. The color filter material 124 is adapted to separate light to a red-green-blue (R, G, or B) original element when the semiconductor device 100 is utilized as a back side illumination image sensor, for example. The color filter material 124 comprises a photosensitive material in some embodiments, as another example. The lens material 125 may comprise a micro-lens material in some embodiments, as an example. Alternatively, the color filter material 124 and the lens material 125 may comprise other materials. In some embodiments, the color filter material 124 and/or the lens material 125 are not included, and the array region 112 may include other types of devices than pixels.

The second semiconductor chip W2 includes a substrate 102 b that includes a plurality of devices 128 formed therein. The substrate 102 b may include similar materials and devices as described for the substrate 102 a of the first semiconductor chip W1, for example. The second semiconductor chip W2 includes an IMD 104 b, a plurality of conductive lines 106 b, and a plurality of conductive vias 108 b disposed over the substrate 102 b, that comprise similar materials as described for the first semiconductor chip W1. The first semiconductor chip W1 is inverted before bonding the first semiconductor chip W1 to the second semiconductor chip W2, as illustrated in FIG. 2, in some embodiments.

The third semiconductor chip Wn comprises similar materials as described for the first and second semiconductor chips W1 and W2, such as a substrate, various circuits and/or devices formed thereon, and an IMD, conductive lines, and vias, not shown, in some embodiments.

In accordance with some embodiments of the present disclosure, a guard structure (not shown in FIGS. 1 and 2; see guard structures 130 shown in FIGS. 3 and 4) is disposed in the first semiconductor chip W1 between the array region 112 and one of the through-vias 110, 110 a, 110 b, and/or 110 c (e.g., in the intermediate region 114), or between one of the through-vias 110, 110 a, 110 b, and/or 110 c and a portion of the periphery region 116. In some embodiments, a guard structure 130 is included in the first semiconductor chip W1 between both the array region 112 and one of the through-vias 110, 110 a, 110 b, and/or 110 c and also between one of the through-vias 110, 110 a, 110 b, and/or 110 c and a portion of the periphery region 116. In some embodiments, a guard structure 130 is disposed in the first semiconductor chip W1 between the array region 112 and one of the through-vias 110, 110 a, 110 b, and/or 110 c (e.g., in the intermediate region 114), and/or between one of the through-vias 110, 110 a, 110 b, and/or 110 c and a periphery device 126 in the periphery region 116.

For example, in FIGS. 1 and 2, regions A illustrate regions where a guard structure 130 is formed in the first semiconductor chip W1 between the array region 112 and one of the through-vias 110 a, 110 b, and/or 110 c in the intermediate region 114. Region B illustrates a region where a guard structure 130 is formed in the first semiconductor chip W1 between one of the through-vias 110 a, 110 b, and/or 110 c and a portion of the periphery region 116 or a periphery device 126 in the periphery region 116.

FIG. 3 is a top view of a semiconductor device 100 which illustrates a guard structure 130 disposed within the semiconductor device 100 in accordance with some embodiments. In some embodiments, the guard structure 130 comprises two or more portions (e.g., two portions are shown in FIG. 3), which portions are also referred to herein as guard structures 130. The guard structures 130 substantially comprise a shape in the top view of the first semiconductor chip W1 of the semiconductor device 100 of a rectangle in the embodiments shown. The guard structures 130 may also substantially comprise a shape in the top view of a square, e.g., in embodiments wherein the semiconductor device 100 is substantially square or other shapes. The guard structures 130 comprise rings of continuous material (or non-continuous in other embodiments, to be described further herein with reference to FIG. 5) around predetermined regions of the semiconductor device 100, in some embodiments. The two portions of the guard structure 130 shown in FIG. 3 include a first guard structure 130 disposed around the array region 112 including the pixel array 122 between the array region 112 and the through-vias 110; and a second guard structure 130 disposed around the through-vias 110 and the array region 112 between the through vias 110 and the periphery device 126 in the periphery region 116. Alternatively, the guard structure 130 may comprise one portion, or three or more portions.

FIG. 4 is a cross-sectional view of a portion of the semiconductor device 100 shown in FIG. 3, at view 4-4′ of FIG. 3 in accordance with some embodiments. More detailed views of the guard structure 130 in region A and the guard structure 130 in region B in accordance with some embodiments are illustrated in FIG. 4. The guard structures 130 may each comprise a metal feature 130 a, a P-type region 130 b, an N-type region 130 c, or a combination thereof, in some embodiments. In some embodiments, the guard structures 130 may comprise only a metal feature 130 a, only an N-type region 130 c, only a P-type region 130 b, or a combination of two or more thereof, for example. The guard structures 130 may comprise a plurality of the metal features 130 a, a plurality of the P-type regions 130 b, a plurality of the N-type regions 130 c, or a combination thereof, in other embodiments.

In embodiments wherein the guard structure or structures 130 include a metal feature 130 a, the guard structure 130 may comprise a trench formed within the substrate 102 a of the first semiconductor chip W1. The metal feature 130 a comprises a conductive material disposed within the trench. The conductive material of the metal feature 130 a may comprise W, Cu, AlCu, other conductive materials, and/or combinations thereof, as examples.

The trench of the guard structure 130 comprising the metal feature 130 a may be formed in some embodiments using a lithography process, by forming a layer of photoresist (not shown) over the substrate 102 a, patterning the layer of photoresist by exposing the layer of photoresist to energy reflected from or transmitted through a lithography mask (also not shown) having a desired pattern thereon, developing the layer of photoresist, and removing exposed or unexposed portions of the layer of photoresist (depending on whether the photoresist comprises a positive or negative photoresist) using an ashing and/or etch process. The layer of photoresist is then used as an etch mask while portions of the substrate 102 a are etched away using an etch process. The patterning process for the substrate 102 a of the first semiconductor chip W1 may be performed before or after the first semiconductor chip W1 is bonded to another semiconductor chip, for example. Alternatively, the trenches for the metal features 110 a may be formed using a direct patterning, laser drilling, or other type of process.

After the trenches are formed in the substrate 102 a, the trenches are filled with a material. Filling the trenches with the material comprises filling the trenches with an insulating material, a conductive material, or a combination thereof in some embodiments. For example, in FIG. 4, the trenches are first lined with an insulating material 132 a before forming the conductive material of the conductive features 110 a. The insulating material 132 a comprises about 1 nm to about 20 μm of silicon dioxide, silicon nitride (SiN), silicon oxynitride (SiON), a carbon-containing layer such as SiC, tantalum pentoxide (Ta₂O₅), aluminum oxide (Al₂O₃), hafnium oxide (HfO₂), other insulating materials, or combinations or multiple layers thereof in some embodiments. In other embodiments, an insulating material 132 a is not formed in the trenches. The conductive material of the metal feature 130 a is then formed within the trenches over the insulating material 132 a, or directly into the trenches if the insulating material 132 a is not included. The conductive material may be formed using a sputtering process, electro-chemical plating (ECP), physical vapor deposition (PVD), or other methods, for example. Excess conductive material may be removed from over a top surface of the substrate 102 a using a chemical-mechanical polishing (CMP) process, an etch process, or a combination thereof, for example. A barrier 136 may be disposed over a top surface of the metal features 130 a, also shown in FIG. 4. The barrier 136 comprises a material such as an insulator that is adapted to prevent out-diffusion of a conductive material of the metal feature 130 a, preventing contamination in some embodiments, for example. In other embodiments, the barrier 136 is not included.

In FIG. 4, a through-via 110 a formed within the first semiconductor chip W1 is shown. A through-via 110 b formed within the first semiconductor chip W1 and that also extends into the second semiconductor chip W2 is shown in phantom (e.g., in dashed lines). A through-via 110 b formed within the first semiconductor chip W1 and that extends through the second semiconductor chip W2 and into the third semiconductor chip Wn is also shown in phantom.

The through-vias 110 a, 110 b, and 110 c may be formed in the semiconductor device 100 after the bonding process for the semiconductor chips W1, W2, and Wn, in some embodiments. Trenches for the through-vias 110 a, 110 b, and 110 c can be formed after the bonding process and then filled with a conductive material, such as W, Cu, AlCu, other conductive materials, and/or combinations or multiple layers thereof, as examples. The trenches are lined with about 0.5 μm to about 20 μm of an insulating material 138 such as silicon dioxide, SiN, SiON, a carbon-containing layer such as SiC, Ta₂O₅, Al₂O₃, HfO₂, other insulators, or combinations or multiple layers thereof in some embodiments, before forming the conductive material of the through-vias 110 a, 110 b, and 110 c.

In other embodiments, portions of the through-vias 110 a, 110 b, and 110 c may be formed before the bonding process during the manufacturing process of each of the semiconductor chips W1, W2, and Wn. The portions of the through-vias 110 a, 110 b, and 110 c are positioned so that they align after the bonding process for the semiconductor chips W1, W2, and Wn in these embodiments, for example.

In embodiments wherein the guard structure or structures 130 include an N-type region 130 c or a P-type region 130 b, the guard structure or structures 130 may be formed by implanting the substrate 102 a of the first semiconductor chip W1 and/or epitaxially growing a material with a trench formed in the substrate 102 a to form a P-type material, an N-type material, or a combination thereof, for example, in accordance with some embodiments. The substrate 102 a of the first semiconductor chip W1 may be implanted with a dopant such as B, As, or P; or SiGe or SiC implanted with B, As, or P, may be epitaxially grown in the trenches formed in the substrate 102 a to form the guard structures 130 comprising the N-type regions 130 c or the P-type regions 130 b, as examples. Alternatively, the N-type regions 130 c and the P-type regions 130 b may be formed using other methods.

An insulating material 132 b may be included in the first semiconductor chip W1 proximate the N-type regions 130 c or the P-type regions 130 b, also shown in FIG. 4. The insulating material 132 b may comprise shallow trench isolation (STI) regions, in some embodiments. A contact (not shown) may also be disposed over a top surface of the N-type regions 130 c or the P-type regions 130 b, as illustrated for the guard structures 130 comprising the metal features 130 a. In some embodiments, at least portions of the N-type regions 130 c or the P-type regions 130 b may be formed during the manufacturing process of other devices of the first semiconductor chip W1, such as the periphery devices 126, for example. Alternatively, additional processing steps can be included to form the N-type regions 130 c or the P-type regions 130 b.

In some embodiments, the guard structure or structures 130 comprise a width comprising dimension d₁ in the cross-sectional view shown in FIG. 4, wherein dimension d₁ comprises about 0.01 μm or greater, in some embodiments. The guard structure or structures 130 are spaced apart from the through-via 110 a, 110 b, or 110 c by a dimension d₂ that comprises about 0.1 μm or greater, in some embodiments. The guard structure or structures 130 are formed at a depth of dimension d₃ or d₄ that comprises about 0.01 μm to about 100 μm below a surface of the first semiconductor chip W1, in some embodiments. In embodiments wherein the guard structures 130 comprise an N-type region 130 c or a P-type region 130 b, dimension d₃ comprises about 0.01 μm to about 20 μm below a surface of the first semiconductor chip W1, as another example.

In some embodiments, a voltage may be applied during the operation of the semiconductor device 100 to the guard structure or structures 130. For example, in embodiments wherein the guard structure 130 comprises a metal feature 130 a, a voltage of about −10 Volts (V) to about 10 V may be applied to the metal feature 130 a during the operation of the semiconductor device 100. In embodiments wherein the guard structure 130 comprises a P-type region 130 b, a voltage of about 0 V to about −10 V may be applied to the P-type region 130 b during the operation of the semiconductor device 100. In embodiments wherein the guard structure 130 comprises an N-type region 130 c, a voltage of about 0.1 V to about 10 V may be applied to the N-type region 130 c during the operation of the semiconductor device 100. Alternatively, other voltage levels may be applied to the ground structures 130 during the operation of the semiconductor devices 100 described herein. Applying the voltage to the guard structure 130 improves noise reduction of the guard structures 130 in some embodiments, for example. In other embodiments, a voltage may not be applied.

Two guard structures 130 are shown in FIGS. 3 and 4; alternatively, one, two, or three or more guard structures 130 may be included in a semiconductor device 100 in accordance with some embodiments.

FIGS. 5 through 7 are top views of semiconductor devices 100 that illustrate various shapes and configurations of guard structures 130, 130′ and 130″ for semiconductor devices 100 in accordance with some embodiments. In accordance with some embodiments, the guard structures 130 may substantially comprise a shape in a top view of the first semiconductor chip W1 of a square or a rectangle (i.e., the embodiments shown in FIG. 3 and previously described herein, and in the embodiments shown in FIGS. 6 and 7). In other embodiments, the guard structures 130′ and 130″ may substantially comprise a shape in a top view of the first semiconductor chip W1 of a continuous bar, a plurality of continuous bars, a non-continuous bar, or a plurality of non-continuous bars (i.e., the embodiments shown in FIG. 5). In yet other embodiments, the guard structures 130, 130′, and 130″ may comprise combinations of the various shapes described herein.

In some embodiments, the guard structures 130 may be disposed proximate or around the array region 112 (i.e., the embodiments shown in FIGS. 3 and 5), disposed proximate or around the plurality of through-vias 110 (i.e., the embodiments shown in FIGS. 3, 5, 6, and 7), disposed proximate or around the plurality of through-vias 110 and the array region (i.e., the embodiments shown in FIGS. 3 and 5), disposed proximate or around one of the plurality of through-vias 110 (i.e., the embodiments shown in FIG. 6), disposed proximate or around a group of the plurality of through-vias 110 (i.e., the embodiments shown in FIG. 6), disposed proximate or around one of the plurality of periphery devices 126 (i.e., the embodiments shown in FIG. 7), disposed proximate or around a group of the plurality of periphery devices 126 (i.e., the embodiments shown in FIG. 7), or a combination thereof.

In FIG. 5, guard structures 130′ substantially comprising a shape of a continuous bar are disposed proximate the through-vias 110. For example, the guard structures 130′ extend along a row of the through-vias 110 along each side of the semiconductor device 100. The semiconductor device 100 includes guard structures 130′ comprising a plurality of continuous bars, for example. The guard structures 130′ are disposed either between the through-vias 110 and the array region 112, or between the through-vias 110 and the periphery region 116, or both. All or some of the guard structures of a semiconductor device 100 may comprise a guard structure 130′ substantially having a shape of a continuous bar, in accordance with some embodiments.

Guard structure 130″ substantially comprising a shape of a plurality of non-continuous bars are disposed proximate a group of the plurality of through-vias 110. For example, the guard structures 130″ extends along a row of the through-vias 110 along each one side of the semiconductor device 100, and the guard structures 130″ are disposed between the through-vias 110 and the array region 112 in the embodiment shown in FIG. 5. In other embodiments, the guard structures 130″ may be disposed either between the through-vias 110 and the array region 112, between the through-vias 110 and the periphery region 116, or both (not shown). All or some of the guard structures of a semiconductor device 100 may comprise a guard structure 130″ substantially comprising a shape of a plurality of non-continuous bars, in accordance with some embodiments.

FIG. 6 illustrates some embodiments of the present disclosure wherein a guard structure 130 is disposed around a group of the plurality of through-vias 110, as shown along the left side of the semiconductor device 100. The guard structure 130 substantially comprises a shape of a rectangle in the top view. A portion of the guard structure 130 is disposed between the through-vias 110 and the array region 112, and a portion of the guard structure 130 is disposed between the through-vias 110 and the periphery region 116. All or some of the guard structures of a semiconductor device 100 may comprise a guard structure 130 substantially comprising a rectangular shape that is disposed around a group of the through-vias 110, in accordance with some embodiments.

FIG. 6 also illustrates some embodiments of the present disclosure wherein a guard structure 130 is disposed around one of the plurality of through-vias 110′, as shown at the top side of the semiconductor device 100. The guard structure 130 substantially comprises a shape of a square in the top view. A portion of the guard structure 130 is disposed between the through-vias 110 and the array region 112, and a portion of the guard structure 130 is disposed between the through-vias 110 and the periphery region 116. All or some of the guard structures 130 of a semiconductor device 100 may comprise a guard structure 130 having a substantially square shape that is disposed around one or all of the through-vias 110, in accordance with some embodiments.

FIG. 7 illustrates some embodiments of the present disclosure wherein a guard structure 130 is disposed around a group of the plurality of periphery devices 126, as shown along the left side of the semiconductor device 100. The guard structure 130 substantially comprises a shape of a rectangle in the top view. A portion of the guard structure 130 is disposed between the through-vias 110 and the array region 112, and a portion of the guard structure 130 is disposed between the through-vias 110 and the periphery devices 126 in the periphery region 116. All or some of the guard structures of a semiconductor device 100 may comprise a guard structure 130 having a substantially rectangular shape that is disposed around a group of the periphery devices 126, in accordance with some embodiments.

FIG. 7 also illustrates some embodiments of the present disclosure wherein a guard structure 130 is disposed around one of the periphery devices 126′, as shown along the top side of the semiconductor device 100. The guard structure 130 substantially comprises a shape of a square in the top view. A portion of the guard structure 130 is disposed between the through-vias 110 and the array region 112, and a portion of the guard structure 130 is disposed between the through-vias 110 and the periphery device 126 in the periphery region 116. All or some of the guard structures 130 of a semiconductor device 100 may comprise a guard structure 130 having a substantially square shape that is disposed around one or all of the periphery devices 126, in accordance with some embodiments.

In the embodiments shown in FIG. 6, the guard structures 130 may alternatively comprise a continuous bar, a plurality of continuous bars, a non-continuous bar, a plurality of non-continuous bars, and/or combinations thereof (i.e., as shown in FIG. 5), disposed proximate or around a group of the through-vias 110 or one of the through-vias 110′. Likewise, In the embodiments shown in FIG. 7, the guard structures 130 may alternatively comprise a continuous bar, a plurality of continuous bars, a non-continuous bar, a plurality of non-continuous bars, and/or combinations thereof (i.e., as shown in FIG. 5), disposed proximate or around a group of the periphery devices 126 or one of the periphery devices 126′.

Furthermore, a guard structure of a semiconductor device 100 may comprise one or more of the novel guard structures 130, 130′, and 130″ positioned in the locations described on the semiconductor device 100 herein in accordance with some embodiments, for example.

Referring again to FIG. 4, some examples of combinations of the metal features 130 a, P-type regions 130 b, and N-type regions 130 c that may be used to form the guard structures 130, 130′, and 130″ described herein may comprise: a first P-type region 130 b, an N-type 130 c region adjacent the first P-type region 130 b, and a second P-type region 130 b adjacent the N-type region 130 c; a first metal feature 130 a, a first P-type region 130 b proximate the first metal feature 130 a, an N-type 130 c region adjacent the first P-type region 130 b, a second P-type region 130 b adjacent the N-type region 130 c, and a second metal feature 130 a proximate the second P-type region 130 b; or an N-type region 130 c, P-type region 130 b adjacent the N-type region 130 c, and a metal feature 130 a proximate the P-type region 130 b, as examples. Alternatively, the metal features 130 a, P-type regions 130 b, and N-type regions 130 c may be combined in other configurations to form the guard structures 130, 130′, and 130″ described herein.

FIG. 8 is a flow chart 160 showing a method of manufacturing a semiconductor device 100 in accordance with some embodiments. In step 162, a semiconductor chip W1 is provided (see also FIG. 1) that includes an array region 112, a periphery region 116, and a through-via 110 a disposed therein. In step 164, a guard structure 130 is formed in the semiconductor chip W1 between the array region 112 and the through via 110 a or between the through-via 110 a and a portion of the periphery region 116 (see FIG. 3).

Some embodiments of the present disclosure include manufacturing methods for semiconductor devices 100, and also include semiconductor devices 100 manufactured using the methods and that include the novel guard structures 130, 130′, and 130″ described herein. Some embodiments of the present disclosure also include image sensor devices that include the guard structures 130, 130′, and 130″ described herein.

In some embodiments, the image sensor devices comprise stacked complementary metal oxide semiconductor (CMOS) back side illumination (BSI) image sensor devices, for example. Referring again to FIG. 1, a top surface of the first semiconductor chip W1 comprises a back side of the semiconductor device 100, in some embodiments. The through-vias 110 extend from the back side surface through at least a portion of the first semiconductor chip W1 in these embodiments, for example. The guard structures 130 described herein extend from the back side surface fully through the substrate 102 a of the first semiconductor chip W1, as shown in FIG. 4, in accordance with some embodiments.

Advantages of some embodiments of the disclosure include providing novel guard structures 130, 130′ and 130″ that improve performance of semiconductor devices and image sensor devices. The guard structures 130, 130′, and 130″ comprise continuous or non-continuous rings of conductive or semiconductive material that reduce or improve phenomena of dark current, white pixels, and noise that can occur in some image sensor applications and other semiconductor device applications, in some embodiments, for example. The guard structures 130, 130′, and 130″ reduce through-via 110 process charging build-up caused by grounding paths, noise, and tensor or compressive stress. A voltage may be applied to the guard structure 130, 130′, and 130″ to further reduce noise, in some applications. In other applications, a voltage may not be applied to the guard structures 130, 130′, and 130″. In embodiments wherein the guard structures 130, 130′, and 130″ include metal features 130 a, RF noise is reduced in some embodiments, due to a shielding effect provided by the novel guard structures 130, 130′, 130″, for example. Furthermore, the novel guard structures 130, 130′, and 130″ and designs are easily implementable in manufacturing process flows.

In accordance with some embodiments of the present disclosure, a semiconductor device includes a semiconductor chip including an array region, a periphery region, and a through-via disposed therein. The semiconductor device includes a guard structure disposed in the semiconductor chip between the array region and the through-via or between the through-via and a portion of the periphery region.

In accordance with other embodiments, a method of manufacturing a semiconductor device includes providing a semiconductor chip including an array region, a periphery region, and a through-via disposed therein, and forming a guard structure in the semiconductor chip between the array region and the through-via or between the through-via and a portion of the periphery region.

In accordance with other embodiments, an image sensor device includes a first semiconductor chip including an array region, a periphery region disposed around the array region, and a first through-via disposed between the array region and the periphery region. The image sensor device includes a second semiconductor chip bonded to the first semiconductor chip. The second semiconductor chip includes a second through-via disposed therein, the second through-via also being disposed in the first semiconductor chip. A guard structure is disposed in the first semiconductor chip between the array region and the first through-via or the second through-via, or between a portion of the periphery region and the first through-via or the second through-via.

Although some embodiments of the present disclosure and their advantages have been described in detail, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the disclosure as defined by the appended claims. For example, it will be readily understood by those skilled in the art that many of the features, functions, processes, and materials described herein may be varied while remaining within the scope of the present disclosure. Moreover, the scope of the present application is not intended to be limited to the particular embodiments of the process, machine, manufacture, composition of matter, means, methods and steps described in the specification. As one of ordinary skill in the art will readily appreciate from the disclosure of the present disclosure, processes, machines, manufacture, compositions of matter, means, methods, or steps, presently existing or later to be developed, that perform substantially the same function or achieve substantially the same result as the corresponding embodiments described herein may be utilized according to the present disclosure. Accordingly, the appended claims are intended to include within their scope such processes, machines, manufacture, compositions of matter, means, methods, or steps. 

What is claimed is:
 1. A semiconductor device, comprising: a semiconductor chip comprising an array region, a periphery region, and a through-via disposed in the semiconductor chip; and a guard structure disposed in the semiconductor chip between the array region and the through-via or between the through-via and a portion of the periphery region, the guard structure comprising a metal feature, a p-type region, and an n-type region, wherein a first insulating material is on sidewalls of the metal feature and a second insulating material is adjacent the p-type region and the n-type region.
 2. The semiconductor device according to claim 1, wherein the semiconductor chip comprises a first semiconductor chip, wherein the semiconductor device further comprises a second semiconductor chip bonded to the first semiconductor chip, and wherein the through-via is also disposed within the second semiconductor chip.
 3. The semiconductor device according to claim 2, wherein the semiconductor device further comprises a third semiconductor chip bonded to the second semiconductor chip, and wherein the through-via is also disposed within the third semiconductor chip.
 4. The semiconductor device according to claim 3, further comprising: a second through-via disposed in the first semiconductor chip and extending from the first semiconductor chip into the second semiconductor chip, wherein the second through-via does not extend into the third semiconductor chip; and a third through-via disposed in the first semiconductor chip, wherein the third through-via does not extend into the second semiconductor chip or the third semiconductor chip.
 5. The semiconductor device according to claim 1, wherein the guard structure comprises a first guard structure, wherein the first guard structure is disposed in the semiconductor chip between the array region and the through-via, and wherein the semiconductor device further comprises a second guard structure disposed in the semiconductor chip between the through-via and the portion of the periphery region.
 6. The semiconductor device according to claim 1, wherein the periphery region is disposed around the array region.
 7. The semiconductor device according to claim 1, wherein the array region comprises an array of pixels.
 8. The semiconductor device according to claim 1, wherein the semiconductor chip comprises a plurality of the through-vias; wherein the semiconductor chip comprises a plurality of periphery devices in the periphery region; and wherein the guard structure is disposed proximate or around the array region, disposed proximate or around the plurality of through-vias, disposed proximate or around the plurality of through-vias and the array region, disposed proximate or around one of the plurality of through-vias, disposed proximate or around a group of the plurality of through-vias, disposed proximate or around one of the plurality of periphery devices, disposed proximate or around a group of the plurality of periphery devices, or a combination thereof.
 9. The semiconductor device according to claim 1, wherein the first insulating material has a thickness of about 1 nm to about 20 μm on the sidewalls of the metal feature.
 10. A method of manufacturing a semiconductor device, the method comprising: providing a semiconductor chip comprising an array region, a periphery region, and a through-via disposed therein; and forming a guard structure in the semiconductor chip between the array region and the through-via or between the through-via and a portion of the periphery region, wherein forming the guard structure comprises: forming a trench in a first portion of the semiconductor chip; filling the trench with a conductive material; implanting a second portion of the semiconductor chip with an n-type impurity to form an n-type region; implanting a third portion of the semiconductor chip with a p-type impurity to form a p-type region; and forming shallow trench isolation regions in the semiconductor chip proximate the n-type region and the p-type region, the shallow trench isolation regions comprising an insulating material.
 11. The method according to claim 10, wherein the guard structure is formed at a depth of about 0.01 μm to about 100 μm below a surface of the semiconductor chip.
 12. The method according to claim 10, wherein the guard structure has a width of about 0.01 μm or greater.
 13. The method according to claim 10, wherein the guard structure is spaced apart from the through-via by about 0.1 μm or greater.
 14. The method according to claim 10, wherein filling the trench with the conductive material comprises filling the trench with a material selected from the group consisting essentially of: W, Cu, AlCu, and combinations thereof.
 15. The method according to claim 10, wherein forming the trench of the guard structure comprises a lithography process.
 16. The method according to claim 10, further comprising applying a voltage to the guard structure, wherein applying the voltage improves noise reduction of the guard structure.
 17. An image sensor device, comprising: a first semiconductor chip comprising an array region, a periphery region disposed around the array region, and a first through-via disposed between the array region and the periphery region; a second semiconductor chip bonded to the first semiconductor chip, the second semiconductor chip comprising a second through-via disposed therein, the second through-via also being disposed in the first semiconductor chip; and a guard structure disposed in the first semiconductor chip between the array region and the first through-via or the second through-via, or between a portion of the periphery region and the first through-via or the second through-via.
 18. The device according to claim 17, wherein the guard structure comprises a metal feature and wherein a voltage of about −10 Volts (V) to about 10 V is applicable to the metal feature during operation of the image sensor device; wherein the guard structure comprises a P-type region and wherein a voltage of about 0 V to about −10 V is applicable to the P-type region during the operation of the image sensor device; or wherein the guard structure comprises an N-type region and wherein a voltage of about 0.1 V to about 10 V is applicable to the N-type region during the operation of the image sensor device.
 19. The device according to claim 17, wherein the image sensor device comprises a stacked complementary metal oxide semiconductor (CMOS) back side illumination (BSI) image sensor device.
 20. The device according to claim 17, wherein: the guard structure comprises a metal feature; a voltage is applied to the metal feature during operation of the image sensor device; and application of the voltage improves noise reduction of the guard structure. 